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All leads are isolated More information.
DATA SHEET. BFY50; BFY51; BFY52 NPN medium power transistors DISCRETE SEMICONDUCTORS Apr 22
The information presented in this document does not form part of any quotation or datasbeet, is believed to be accurate and reliable and may be changed without notice. Product specification Supersedes data of May Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Philips Semiconductors, 6F, No. Product overview Type number. Characteristic Symbol Rating Unit. Product data sheet Ratasheet data of Oct High-speed switching No secondary breakdown. Low voltage PNP power transistor. BoxTelFax Belarus: Product data sheet Supersedes data of Apr NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information.
General description NPN general-purpose transistors in small plastic packages. High oltage Switching Features: Product specification Supersedes data of Sep All leads are isolated. Start display at page:. Product data sheet Supersedes data of Jan Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 22 7.
Benefit is lower component count, internal compensation for temperature and current gain spread. High voltage fast-switching NPN power transistor.
Description in a plastic package using TrenchMOS technology. Philips Semiconductors Philippines Inc. A linear amplifier 1. TDA Light position controller. Product data sheet Supersedes data of May High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications.
Product specification Supersedes data of Feb General description PNP general-purpose transistors. No liability will be accepted by the publisher for any consequence of its use.
Protection for Ethernet lines. We make every effort to understand the difficulties. They are designed for high speed. Designed for general-purpose amplifier and low speed switching applications.
Stress above one or more of the limiting values may cause permanent damage to the device. Product overview Type number More information. General description NPN general-purpose transistors.
RF transistor with internal bias circuit.
Product specification Supersedes data of Apr Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with.
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NPN general-purpose transistors in small plastic packages. NPN medium power transistor.
This Datasheet is presented by the m anufacturer. These are stress ratings only and operation of the device darasheet these or at any other conditions above those given in the Characteristics sections of the specification is not implied. BB Low-voltage variable capacitance double diode.
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